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| SEMICONDUCTOR TECHNICAL DATA ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES Average Forward Current : IO=30A. E30A27VS, E30A27VR STACK SILICON DIFFUSED DIODE A3 A2 D3 A1 D1 D2 B1 E F POLARITY E30A27VS (+ Type) E30A27VR (- Type) T C2 H MAXIMUM RATING (Ta=25 CHARACTERISTIC DC Reverse Voltage Average Forward Current Peak 1 Cycle Surge Current Non-Repetitive Reverse 1 Cycle Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VDC IF(AV) IFSM IRSM Tj Tstg RATING 24 30 250 (50Hz) 50 -40 150 -40 150 UNIT V A A A DIM A1 A2 A3 B1 B2 C1 C2 D1 MILLIMETERS _ 10.0 + 0.3 _ 13.5 + 0.3 _ 24.0 + 0.5 _ 8.5 + 0.3 _ 10.0 + 0.3 _ 2.0 + 0.3 _ 5.0 + 0.3 _ 2.5 + 0.3 DIM D2 D3 E F G H T MILLIMETERS _ 5.0 + 0.3 _ 4.5 + 0.3 _ 1.9 + 0.3 _ 9.0 + 0.3 _ 1.0 + 0.3 _ 4.4 + 0.5 _ 0.6 + 0.3 MR ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Zener Voltage Peak Forward Voltage Repetitive Peak Reverse Current Zener Voltage Temperature Coefficient Reverse Recovery Time Temperature Resistance VZ VFM IRRM rZ trr Rth ) TEST CONDITION IZ=10mA IFM=100A VRRM=24V IZ=10mA IF=0.1A, IR=0.1A DC total junction to case MIN. 24 23 TYP. MAX. 30 1.2 50 36 15 1.0 UNIT V V A mV/ S /W SYMBOL 2002. 10. 9 Revision No : 1 C1 G B2 1/2 E30A27VS, E30A27VR AVERAGE FORWARD CURRENT I F(AV) (A) I F - VF 1000 FORWARD CURRENT I F (A) I F(AV) - Ta 40 Ta=Tc 30 100 20 10 10 1 0.7 0.8 0.9 1 1.1 1.2 0 0 40 80 120 160 FORWARD VOLTAGE V F (V) AMBIENT TEMPERATURE Ta ( C) 2002. 10. 9 Revision No : 1 2/2 |
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